PART |
Description |
Maker |
HM64YLB36514BP-6H HM64YLB36514 |
16M Synchronous Late Write Fast Static RAM (512-kword × 36-bit, Register-Latch Mode) 16M Synchronous Late Write Fast Static RAM (512-kword 】 36-bit, Register-Latch Mode) Memory>Fast SRAM>Late Write / High Speed Interface Synchronous SRAM
|
Renesas Electronics Corporation
|
GS8170LW36C-333 GS8170LW36C-250 GS8170LW36C-250I G |
333MHz 512K x 36 18MB double late write sigmaRAM SRAM 250MHz 512K x 36 18MB double late write sigmaRAM SRAM 300MHz 512K x 36 18MB double late write sigmaRAM SRAM 333MHz 256K x 72 18MB double late write sigmaRAM SRAM 250MHz 256K x 72 18MB double late write sigmaRAM SRAM 300MHz 1M x 18 18MB double late write sigmaRAM SRAM
|
GSI Technology
|
K7P323688M-HC250 K7P323688M-GC250 |
1M X 36 LATE-WRITE SRAM, 2 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119 1M X 36 LATE-WRITE SRAM, 2 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANCE, BGA-119
|
TOKO, Inc.
|
MT59L128V36PB-4.5 |
128K X 36 LATE-WRITE SRAM, 2.25 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
|
Cardinal Components, Inc.
|
GS8170DW72C-200 GS8170DW72C-300I GS8170DW36C-333 G |
256K X 72 STANDARD SRAM, 1.8 ns, PBGA209 18Mb Σ1x1Dp CMOS I/O Double Late Write SigmaRAM
|
GSI Technology
|
CXK77B1841AGB CXK77B3641AGB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟LVTTL高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速同步SRAM28K的x 36Bit)(4分位,写延迟LVTTL高速同步静态随机存储器28K的36位) 4Mb Late Write LVTTL High Speed Synchronous SRAMs (128K x 36Bit)(4M位、写延迟、高速逻辑收发(HSTL)、高速同步静态RAM (128K x 36) 4Mb的后写入LVTTL高速(128K的x 36Bit)(4分位,写延迟,高速逻辑收发(HSTL),高速同步静态随机存储器28K的36位)同步静态存储器
|
Sony, Corp.
|
UPD44323362F1-C40-FJ1 UPD44323362 |
32M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 1M-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE
|
NEC[NEC]
|
MCM63R836A |
8M Late Write HSTL
|
Motorola, Inc
|
MCM69R736A MCM69R736AZP5 MCM69R736AZP5R MCM69R736A |
4M LATE WRITE HSTL
|
MOTOROLA[Motorola Inc] Motorola, Inc
|
MCM63R736 |
4M Late Write HSTL From old datasheet system
|
Motorola
|